Architecture Modelling of MOS Device for the Circuit simulation

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Louis Jestin
Ibrahim Hamdan


Throughout the course of recent years, the Metal-Oxide-Semiconductor Field Impact Semiconductor (MOSFET) has been the essential part of coordinated circuits. With the advancement of innovation, numerous MOSFET structures with channel lengths of 0.1 pm or less have been recorded in modern examination. The gadget material science and plan tradeoffs among MOSFET's boundaries can be better perceived by looking at these state of the art gadget designs one next to the other. In this review, we think about gadgets utilizing exploratory information, gadget recreation, and logical displaying. The gadgets were made in various different examination offices. Insightful models resolving issues like limit voltage, short-channel impact, and immersion current for these different MOSFET geographies are made under the direction of reenactments and trial information. Then, to look at the gadgets genuinely, these insightful models are utilized to streamline every gadget's underlying boundaries. The main plan components are stressed, and the benefits and detriments of every gadget structure as far as a few execution regions are investigated.

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How to Cite
Louis Jestin, & Ibrahim Hamdan. (2022). Architecture Modelling of MOS Device for the Circuit simulation. Acta Energetica, (02), 21–27. Retrieved from